Title :
Pressure-Free Phenomenon in Top Layer of Chip Body Under Local Pressure and Design of Channel-Free Flat-Packaged IGBT
Author :
Yuan Teng ; Yangjun Zhu ; Qiaoqun Yu ; Wenliang Zhang
Author_Institution :
Dept. of Silicon Devices & Integrated Technol., Inst. of Microelectron., Beijing, China
Abstract :
This letter investigates the magnitude and direction distributions of stress on an insulated gate bipolar transistor (IGBT) die when local pressure is applied to the chip surface. The results show that the pressure needs a certain thickness to spread uniformly all over the entire chip area. At the top of the chip, the stress concentrates right below the pressure contact region while the other region is pressure-free. Deeper into the die, the pressure becomes uniform vertical stress. This phenomenon is used to design the channel-free flat-packaged IGBT with little stress in the channel region by keeping the pressure contact region a safe distance away from the channel region. This improves the effective area of flat-packaged IGBT without destroying the reliability.
Keywords :
insulated gate bipolar transistors; power bipolar transistors; power field effect transistors; semiconductor device packaging; semiconductor device reliability; stress effects; channel free flat packaged IGBT design; chip body top layer; chip surface; insulated gate bipolar transistor die; local pressure; pressure contact; pressure-free phenomenon; stress direction; stress distribution; Insulated gate bipolar transistors; Metals; Performance evaluation; Reliability; Semiconductor optical amplifiers; Silicon; Stress; Channel-free; IGBT; flat-packaged; pressure; pressure.;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2328571
