DocumentCode
618904
Title
Graphene films synthesized on electroplated Cu by chemical vapor deposition
Author
Wenrong Wang ; Chen Liang ; Tie Li ; Heng Yang ; Na Lu ; Yuelin Wang
Author_Institution
State Key Labs. of Transducer Technol., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
fYear
2013
fDate
7-10 April 2013
Firstpage
112
Lastpage
115
Abstract
In this paper, electroplated Cu was used as substrate to grow graphene by chemical vapor deposition (CVD) with a mixture gas of methane, hydrogen and argon. The different electroplated Cu grain size after annealing was studied. We present the growth temperature, growth time and methane concentration are key parameters that affect the structural perfection of graphene.
Keywords
annealing; chemical vapour deposition; electroplating; gas mixtures; graphene; thin films; C; CVD; Cu; annealing; argon gas; chemical vapor deposition; electroplated copper; grain size; graphene films; growth temperature; growth time; hydrogen gas; methane concentration; methane gas; mixture gas; structural perfection; Annealing; Argon; Chemical vapor deposition; Copper; Films; Graphene; Scanning electron microscopy; CVD; electroplated Cu; graphene;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on
Conference_Location
Suzhou
Electronic_ISBN
978-1-4673-6351-8
Type
conf
DOI
10.1109/NEMS.2013.6559693
Filename
6559693
Link To Document