Investigations of silicon wafer bonding using thin Al and Sn films for heterogeneous integration

Author

Zhiyuan Zhu ; Shaonan Wang ; Yichao Xu ; Guanjiang Wang ; Yudan Pi ; Peiquan Wang ; Yunhui Zhu ; Xin Sun ; Min Yu ; Jing Chen ; Min Miao ; Yufeng Jin

Author_Institution

Nat. Key Lab. of Nano/Micro Fabrication Technol., Peking Univ., Beijing, China

fYear

2013

fDate

7-10 April 2013

Firstpage

155

Lastpage

158

Abstract

Metallic wafer bonding has emerged as a key technology for microelectronics and MEMS. The Si wafers with Al metallization film on surface are bonded by applying Sn film as intermediate layer, aiming at the application of heterogeneous integration. Averaged shear strength of 9.9 MPa is realized at bonding temperature as low as 280°C with bonding time as short as 3 minutes under the bonding pressure of 0.25 MPa. Interface microstructure and fracture surface analysis were carried out to understand the underlying mechanism.

Keywords

micromechanical devices; shear strength; wafer bonding; MEMS; averaged shear strength; bonding pressure; fracture surface analysis; heterogeneous integration; interface microstructure; metallic wafer bonding; microelectronics; pressure 0.25 MPa; silicon wafer bonding; Bonding; Conferences; Decision support systems; Films; Silicon; Surface cracks; Tin; Al; Sn; Wafer bonding; heterogeneous integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on

Conference_Location

Suzhou

Electronic_ISBN

978-1-4673-6351-8

Type

conf

DOI

10.1109/NEMS.2013.6559703

Filename

6559703