DocumentCode :
618955
Title :
In-situ measurement of ion angular distribution in bulk titanium DRIE for modeling the etch profile
Author :
Jia Hu ; Shuwei He ; Yiming Zhang ; Jing Chen
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fYear :
2013
fDate :
7-10 April 2013
Firstpage :
332
Lastpage :
335
Abstract :
The bulk titanium deep reactive ion etching (DRIE) enabled high aspect ratio structures and devices are promising for harsh and in vivo environments applications. An etching model is necessary for better profile control to acquire needed performance, in which a correct ion angular distribution (IAD) in chlorine plasma is crucial. In this paper, an overhang SU-8 structure is proposed to experimentally in-situ measure the IAD by analyzing the etching profiles. With these data, a profile evolution model is developed to predict the titanium DRIE process.
Keywords :
angular measurement; chlorine; sputter etching; titanium; IAD; Ti; bulk titanium DRIE process; bulk titanium deep reactive ion etching; chlorine plasma; etch profile modeling; high aspect ratio structures; in vivo environments applications; in-situ measurement; ion angular distribution; overhang SU-8 structure; profile control; profile evolution model; Etching; Fabrication; Iterative closest point algorithm; Plasma measurements; Plasmas; Titanium; DRIE; IAD; SU-8; model; overhang; stiction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on
Conference_Location :
Suzhou
Electronic_ISBN :
978-1-4673-6351-8
Type :
conf
DOI :
10.1109/NEMS.2013.6559744
Filename :
6559744
Link To Document :
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