DocumentCode
618955
Title
In-situ measurement of ion angular distribution in bulk titanium DRIE for modeling the etch profile
Author
Jia Hu ; Shuwei He ; Yiming Zhang ; Jing Chen
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
fYear
2013
fDate
7-10 April 2013
Firstpage
332
Lastpage
335
Abstract
The bulk titanium deep reactive ion etching (DRIE) enabled high aspect ratio structures and devices are promising for harsh and in vivo environments applications. An etching model is necessary for better profile control to acquire needed performance, in which a correct ion angular distribution (IAD) in chlorine plasma is crucial. In this paper, an overhang SU-8 structure is proposed to experimentally in-situ measure the IAD by analyzing the etching profiles. With these data, a profile evolution model is developed to predict the titanium DRIE process.
Keywords
angular measurement; chlorine; sputter etching; titanium; IAD; Ti; bulk titanium DRIE process; bulk titanium deep reactive ion etching; chlorine plasma; etch profile modeling; high aspect ratio structures; in vivo environments applications; in-situ measurement; ion angular distribution; overhang SU-8 structure; profile control; profile evolution model; Etching; Fabrication; Iterative closest point algorithm; Plasma measurements; Plasmas; Titanium; DRIE; IAD; SU-8; model; overhang; stiction;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on
Conference_Location
Suzhou
Electronic_ISBN
978-1-4673-6351-8
Type
conf
DOI
10.1109/NEMS.2013.6559744
Filename
6559744
Link To Document