• DocumentCode
    618955
  • Title

    In-situ measurement of ion angular distribution in bulk titanium DRIE for modeling the etch profile

  • Author

    Jia Hu ; Shuwei He ; Yiming Zhang ; Jing Chen

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • fYear
    2013
  • fDate
    7-10 April 2013
  • Firstpage
    332
  • Lastpage
    335
  • Abstract
    The bulk titanium deep reactive ion etching (DRIE) enabled high aspect ratio structures and devices are promising for harsh and in vivo environments applications. An etching model is necessary for better profile control to acquire needed performance, in which a correct ion angular distribution (IAD) in chlorine plasma is crucial. In this paper, an overhang SU-8 structure is proposed to experimentally in-situ measure the IAD by analyzing the etching profiles. With these data, a profile evolution model is developed to predict the titanium DRIE process.
  • Keywords
    angular measurement; chlorine; sputter etching; titanium; IAD; Ti; bulk titanium DRIE process; bulk titanium deep reactive ion etching; chlorine plasma; etch profile modeling; high aspect ratio structures; in vivo environments applications; in-situ measurement; ion angular distribution; overhang SU-8 structure; profile control; profile evolution model; Etching; Fabrication; Iterative closest point algorithm; Plasma measurements; Plasmas; Titanium; DRIE; IAD; SU-8; model; overhang; stiction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on
  • Conference_Location
    Suzhou
  • Electronic_ISBN
    978-1-4673-6351-8
  • Type

    conf

  • DOI
    10.1109/NEMS.2013.6559744
  • Filename
    6559744