Title :
Annealing effect on the stability of platinum thin films covered by SiO2 or SiNx layer
Author :
Li Xiao ; Zhan Zhao ; Lidong Du ; Shaohua Wu ; Qimin Liu
Author_Institution :
State Key Lab. of Transducer Technol., Inst. of Electron., Beijing, China
Abstract :
This study examined the crystal structure and the surface morphology between Pt and SiO2 or SiNx as a glue layer according to the annealing treatment. The thermal temperature make the surface morphology of the Pt films changed, and the characteristics of Pt thin film resistors under different annealing temperature also been changed. The resistance of the film will decrease after thermal treatment which the annealing temperature is lower than 480° C, and the resistor will increase sharply after annealing above 500°C. SiO2 or SiNx layers covered on Pt thin films also have an effect on the characteristics of Pt thin films.
Keywords :
annealing; crystal structure; electric resistance; metallic thin films; platinum; silicon compounds; surface morphology; thin film resistors; Pt thin film resistor characteristics; Pt-SiNx; Pt-SiO2; annealing effect; annealing temperature; annealing treatment; crystal structure; film resistance; glue layer; platinum thin film stability; silica layer; surface morphology; thermal temperature; thermal treatment; Annealing; Electrodes; Films; Surface morphology; Surface resistance; Temperature sensors; Annealing; Platinum; Pressure sensor; Resistance;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on
Conference_Location :
Suzhou
Electronic_ISBN :
978-1-4673-6351-8
DOI :
10.1109/NEMS.2013.6559749
