Annealing effect on the stability of platinum thin films covered by SiO2 or SiNx layer

Author

Li Xiao ; Zhan Zhao ; Lidong Du ; Shaohua Wu ; Qimin Liu

Author_Institution

State Key Lab. of Transducer Technol., Inst. of Electron., Beijing, China

fYear

2013

fDate

7-10 April 2013

Firstpage

352

Lastpage

355

Abstract

This study examined the crystal structure and the surface morphology between Pt and SiO₂ or SiN_x as a glue layer according to the annealing treatment. The thermal temperature make the surface morphology of the Pt films changed, and the characteristics of Pt thin film resistors under different annealing temperature also been changed. The resistance of the film will decrease after thermal treatment which the annealing temperature is lower than 480° C, and the resistor will increase sharply after annealing above 500°C. SiO₂ or SiN_x layers covered on Pt thin films also have an effect on the characteristics of Pt thin films.

Keywords

annealing; crystal structure; electric resistance; metallic thin films; platinum; silicon compounds; surface morphology; thin film resistors; Pt thin film resistor characteristics; Pt-SiN_x; Pt-SiO₂; annealing effect; annealing temperature; annealing treatment; crystal structure; film resistance; glue layer; platinum thin film stability; silica layer; surface morphology; thermal temperature; thermal treatment; Annealing; Electrodes; Films; Surface morphology; Surface resistance; Temperature sensors; Annealing; Platinum; Pressure sensor; Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on

Conference_Location

Suzhou

Electronic_ISBN

978-1-4673-6351-8

Type

conf

DOI

10.1109/NEMS.2013.6559749

Filename

6559749