DocumentCode :
618984
Title :
Fabrication and characterization of surface-modified dry electrode for monitoring biopotential
Author :
Yuanfang Chen ; Weihua Pei ; Sanyuan Chen ; Shanshan Zhao ; Huan Wang ; Qiang Gui ; Hongda Chen
Author_Institution :
State Key Lab. of Integrated Optoelectron., Inst. of Semicond., Beijing, China
fYear :
2013
fDate :
7-10 April 2013
Firstpage :
474
Lastpage :
477
Abstract :
The low and stable contact impedance between the dry electrode and skin interfaces is crucial for the acquisition of high quality biopotential signal, especially for long-term recording. Building upon this fact, poly(3,4-ethylenedioxythiophene) (PEDOT), was introduced onto the surface of dry electrode to increase the active contact area and reduce contact impedance. Silicon-based dry electrode (6 mm × 6 mm) with pyramid-like micro-needles was fabricated by a low cost method: dicing plus etching. The electrode-to-skin contact impedance (ESCI) measured on subjects proved that dry electrodes with PEDOT surface-modification have better electrical properties than that without PEDOT surface-modification. Besides, PEDOT modification combined with the microfabrication process can provide a rapid, cost-effective and high-yield method to manufacture dry electrode.
Keywords :
bioMEMS; bioelectric potentials; biomedical electrodes; electric impedance; etching; microfabrication; needles; polymers; silicon; skin; surface treatment; PEDOT surface-modification; Si; contact impedance; electrical properties; electrode-to-skin contact impedance; etching; high quality biopotential signal; microfabrication; poly(3,4-ethylenedioxythiophene); pyramid-like micro-needles; silicon-based dry electrode; skin interfaces; stable contact impedance; surface-modified dry electrode; Coatings; Electrodes; Gold; Impedance; Skin; Surface impedance; Surface treatment; biopotential; dry electrode; modification; poly(3,4-ethylenedioxythiophene) (PEDOT);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on
Conference_Location :
Suzhou
Electronic_ISBN :
978-1-4673-6351-8
Type :
conf
DOI :
10.1109/NEMS.2013.6559773
Filename :
6559773
Link To Document :
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