• DocumentCode
    618997
  • Title

    Identification of ligand-receptor binding affinity using AlGaN/GaN high electron mobility transistors and binding-site models

  • Author

    Yu-Lin Wang ; Chih-Cheng Huang ; You-Ren Hsu ; Yen-Wen Kang

  • Author_Institution
    Inst. of Nanoengineering & Microsyst., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2013
  • fDate
    7-10 April 2013
  • Firstpage
    532
  • Lastpage
    537
  • Abstract
    AlGaN/GaN high electron mobility transistors (HEMTs) were immobilized with various receptors, including antibodies, duplex DNA, and HIV reverse transcriptase (RT) enzymes to detect ligands, including peptides, SARS proteins, and HIV drugs, respectively. Signals generated by the sensors were fitted into binding-site models and analyzed. The dissociation constants of the ligand-receptor pairs and the number of binding-sites on receptors were resolved. The HEMTs and the models were demonstrated to be useful for drug developments and for elucidating SARS virus replication.
  • Keywords
    DNA; III-V semiconductors; aluminium compounds; biomedical electronics; biosensors; dissociation; drugs; enzymes; gallium compounds; high electron mobility transistors; microorganisms; wide band gap semiconductors; AlGaN-GaN; HEMT-based biosensors; HIV drugs; HIV reverse transcriptase; RT enzymes; SARS proteins; SARS virus replication; binding-site models; dissociation constants; duplex DNA; high electron mobility transistors; ligand detection; ligand-receptor binding affinity identification; ligand-receptor pairs; peptides; Equations; HEMTs; MODFETs; Mathematical model; Peptides; Proteins; Sensors; GaN; HEMTs; binding sites; dissociation constant; sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on
  • Conference_Location
    Suzhou
  • Electronic_ISBN
    978-1-4673-6351-8
  • Type

    conf

  • DOI
    10.1109/NEMS.2013.6559786
  • Filename
    6559786