DocumentCode
618997
Title
Identification of ligand-receptor binding affinity using AlGaN/GaN high electron mobility transistors and binding-site models
Author
Yu-Lin Wang ; Chih-Cheng Huang ; You-Ren Hsu ; Yen-Wen Kang
Author_Institution
Inst. of Nanoengineering & Microsyst., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear
2013
fDate
7-10 April 2013
Firstpage
532
Lastpage
537
Abstract
AlGaN/GaN high electron mobility transistors (HEMTs) were immobilized with various receptors, including antibodies, duplex DNA, and HIV reverse transcriptase (RT) enzymes to detect ligands, including peptides, SARS proteins, and HIV drugs, respectively. Signals generated by the sensors were fitted into binding-site models and analyzed. The dissociation constants of the ligand-receptor pairs and the number of binding-sites on receptors were resolved. The HEMTs and the models were demonstrated to be useful for drug developments and for elucidating SARS virus replication.
Keywords
DNA; III-V semiconductors; aluminium compounds; biomedical electronics; biosensors; dissociation; drugs; enzymes; gallium compounds; high electron mobility transistors; microorganisms; wide band gap semiconductors; AlGaN-GaN; HEMT-based biosensors; HIV drugs; HIV reverse transcriptase; RT enzymes; SARS proteins; SARS virus replication; binding-site models; dissociation constants; duplex DNA; high electron mobility transistors; ligand detection; ligand-receptor binding affinity identification; ligand-receptor pairs; peptides; Equations; HEMTs; MODFETs; Mathematical model; Peptides; Proteins; Sensors; GaN; HEMTs; binding sites; dissociation constant; sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on
Conference_Location
Suzhou
Electronic_ISBN
978-1-4673-6351-8
Type
conf
DOI
10.1109/NEMS.2013.6559786
Filename
6559786
Link To Document