Research on the structure of ultrathin Si PIN detector

Author

Peiquan Wang ; Dayu Tian ; Shaonan Wang ; Min Yu ; Yufeng Jin

Author_Institution

Nat. Key Lab. of Nano/Micro Fabrication Technol., Peking Univ., Beijing, China

fYear

2013

fDate

7-10 April 2013

Firstpage

629

Lastpage

632

Abstract

Ultrathin PIN Detectors have been applied in radiation detection for particle identification and etc. In this paper, we present simulation research on the structure of ultrathin Si PIN detector based on bonding technology by using Sentaurus TCAD tool. The normal structure and reverse structure of ultrathin Si PIN detector are simulated and compared. The reverse current of detector and electrical field distribution are analyzed. It is found that the reverse current of the reverse structure increases fast when the voltage exceeds a threshold value. It is explained by considering the parasitic MOS structure. This effect can be reduced by increasing the thickness of buried SiO₂.

Keywords

MIS devices; bonding processes; electric sensing devices; elemental semiconductors; radiation detection; silicon; silicon compounds; Sentaurus TCAD tool; Si; SiO₂; bonding technology-based ultrathin PIN detector; electrical field distribution; parasitic MOS structure; particle identification; radiation detection; reverse current; reverse structure; simulation research; Bonding; Charge carrier processes; Current density; Detectors; Mathematical model; Silicon; Threshold voltage; PIN detector; reverse current; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on

Conference_Location

Suzhou

Electronic_ISBN

978-1-4673-6351-8

Type

conf

DOI

10.1109/NEMS.2013.6559808

Filename

6559808