Title :
Research on the structure of ultrathin Si PIN detector
Author :
Peiquan Wang ; Dayu Tian ; Shaonan Wang ; Min Yu ; Yufeng Jin
Author_Institution :
Nat. Key Lab. of Nano/Micro Fabrication Technol., Peking Univ., Beijing, China
Abstract :
Ultrathin PIN Detectors have been applied in radiation detection for particle identification and etc. In this paper, we present simulation research on the structure of ultrathin Si PIN detector based on bonding technology by using Sentaurus TCAD tool. The normal structure and reverse structure of ultrathin Si PIN detector are simulated and compared. The reverse current of detector and electrical field distribution are analyzed. It is found that the reverse current of the reverse structure increases fast when the voltage exceeds a threshold value. It is explained by considering the parasitic MOS structure. This effect can be reduced by increasing the thickness of buried SiO2.
Keywords :
MIS devices; bonding processes; electric sensing devices; elemental semiconductors; radiation detection; silicon; silicon compounds; Sentaurus TCAD tool; Si; SiO2; bonding technology-based ultrathin PIN detector; electrical field distribution; parasitic MOS structure; particle identification; radiation detection; reverse current; reverse structure; simulation research; Bonding; Charge carrier processes; Current density; Detectors; Mathematical model; Silicon; Threshold voltage; PIN detector; reverse current; simulation;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on
Conference_Location :
Suzhou
Electronic_ISBN :
978-1-4673-6351-8
DOI :
10.1109/NEMS.2013.6559808
