A novel method to fabricate silicon nanopore arrays

This paper presents a novel method for fabrication of silicon nanopore arrays. The proposed method comprises of an inductive coupled plasma (ICP) deep etching and a two-step anisotropic wet etching. A nanopore array with an average feature size of 55 nm and several individual rectangular nanopores with feature sizes as small as 18 nm were successfully obtained using this method. These results indicate the potential of this method for the large-scale production of nanopores arrays with desired sizes and shapes.