• DocumentCode
    619083
  • Title

    Fabrication and characterization of micro-structured supercapacitor with nickel on porous copper

  • Author

    Yin, J.L. ; Lee, Y.J. ; Park, Jae Young

  • Author_Institution
    Dept. of Electron. Eng., Kwangwoon Univ., Seoul, South Korea
  • fYear
    2013
  • fDate
    7-10 April 2013
  • Firstpage
    919
  • Lastpage
    922
  • Abstract
    This paper reports the fabrication method and characteristics of a three dimensional micro interdigital structured supercapacitor. The proposed capacitor was fabricated by using two porous Cu/Ni electrodes with ultra-high surface area. The porous electrodes were formed by using a negative photoresist KMPR for high aspect ratio structure and electroplating technique. The electrochemical performances of the fabricated supercapacitor were examined in 1M KOH solution by using the cyclic voltammetric (CV), chronopotentiometric (CP), and electrochemical impedance spectroscopic (EIS) techniques. It demonstrated the pseudocapacitive and stable charge/discharge behavior. A high specific capacitance of 201 mF/cm2, a power density of 5.06 mW/cm2, and low series resistance of 2.5 Ω were obtained.
  • Keywords
    copper alloys; nickel alloys; photoresists; porous materials; supercapacitors; voltammetry (chemical analysis); Cu-Ni; chronopotentiometric technique; cyclic voltammetric technique; electrochemical impedance spectroscopic technique; electrochemical performances; electroplating technique; high aspect ratio structure; negative photoresist; porous copper; porous electrodes; power density; resistance 2.5 ohm; series resistance; stable charge/discharge behavior; three dimensional micro interdigital structured supercapacitor; ultra-high surface area; Capacitance; Copper; Electrodes; Materials; Nickel; Supercapacitors; Electrochemistry; Interdigital structur; Nickel; Porous Cu; Pseudocapacitor; Supercapacito;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems (NEMS), 2013 8th IEEE International Conference on
  • Conference_Location
    Suzhou
  • Electronic_ISBN
    978-1-4673-6351-8
  • Type

    conf

  • DOI
    10.1109/NEMS.2013.6559873
  • Filename
    6559873