p-i-n MgBeZnO-Based Heterostructured Ultraviolet LEDs

Triple targets of MgO, Be, and Zn and double targets of MgO and Al-doped ZnO were used to deposit i-Mg_0.047Be_0.083Zn_0.870O films and n-MgZnO:Al films in a magnetron radio frequency co-sputter system. The optical energy bandgap of the i-Mg_0.047Be_0.083Zn_0.870O films and n-MgZnO:Al films were 3.51 and 3.75 eV, respectively. The electron concentration and mobility of the n-MgZnO:Al films were 5.10 × 10²¹ cm^-3 and 2.30 cm²/V·s, respectively. The i-Mg_0.047Be_0.083Zn_0.870O film and n-MgZnO:Al films were sequentially deposited on a p-GaN layer for fabricating p-i-n ultraviolet light-emitting diode heterostructures. The peak emission wavelength of the resulting ultraviolet light-emitting diodes was ranging from 352.8 to 362.6 nm, when the injection current increased from 5 to 80 mA.