DocumentCode
619471
Title
Towards variation-aware system-level power estimation of DRAMs: An empirical approach
Author
Chandrasekar, Karthik ; Weis, Christian ; Akesson, Benny ; Wehn, Norbert ; Goossens, Kees
Author_Institution
Comput. Eng., Tech. Univ. Delft, Delft, Netherlands
fYear
2013
fDate
May 29 2013-June 7 2013
Firstpage
1
Lastpage
8
Abstract
DRAM vendors provide pessimistic current measures in memory datasheets to account for worst-case impact of process variations and to improve their production yield, leading to unrealistic power consumption estimates. In this paper, we first demonstrate the possible effects of process variations on DRAM performance and power consumption by performing Monte-Carlo simulations on a detailed DRAM cross-section. We then propose a methodology to empirically determine the actual impact for any given DRAM memory by assessing its performance characteristics during the DRAM calibration phase at system boot-time, thereby enabling its optimal use at run-time. We further employ our analysis on Micron´s 2Gb DDR3-1600-x16 memory and show considerable over-estimation in the datasheet measures and the energy estimates (up to 28%), by using realistic current measures for a set of MediaBench applications.
Keywords
DRAM chips; Monte Carlo methods; calibration; electric current measurement; DRAM calibration phase; DRAM memory; DRAM variation-aware system-level power estimation; DRAM vendors; MediaBench applications; Monte-Carlo simulations; bit rate 2 Gbit/s; detailed DRAM cross-section; memory datasheets; micron DDR3-1600-x16 memory; pessimistic current measures; power consumption; realistic current measures; unrealistic power consumption estimates; worst-case impact; Current measurement; Frequency measurement; Integrated circuit modeling; Monte Carlo methods; Power demand; Random access memory; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference (DAC), 2013 50th ACM/EDAC/IEEE
Conference_Location
Austin, TX
ISSN
0738-100X
Type
conf
Filename
6560616
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