Exploring Tunnel-FET for ultra low power analog applications: A case study on operational transconductance amplifier

Author

Trivedi, Amit Ranjan ; Carlo, Sergio ; Mukhopadhyay, Saibal

Author_Institution

Sch. of ECE, Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2013

fDate

May 29 2013-June 7 2013

Firstpage

1

Lastpage

6

Abstract

This work studies the potentials and challenges of designing ultra low-power analog circuits exploiting unique characteristics of Tunnel-FET (TFET). TFET can achieve ultra-low quiescent current (~pA). In the subthreshold operation, TFET exhibit subthreshold swing lower than 60mV/decade, and hence higher transconductance per bias current than the MOSFET. TFET also exhibit very weak temperature dependence, and higher output resistance. Among several challenges, TFET demonstrate higher Shot noise at low biasing current. Through design of TFET based Operational Transconductance Amplifier (OTA) these challenges and opportunities are discussed. For implantable bio-medical applications, TFET OTA based neural amplifier design is studied.

Keywords

field effect transistors; low-power electronics; neural chips; operational amplifiers; tunnel transistors; TFET OTA based neural amplifier design; operational transconductance amplifier; shot noise; subthreshold swing; transconductance per bias current; tunnel FET; ultra low power analog circuits; ultra low quiescent current; CMOS integrated circuits; Linearity; Logic gates; MOSFET; Noise; Transconductance; Tunneling; Tunnel-FET; bio-medical designs; operation transconductance amplifier; ultra-low power designs;

fLanguage

English

Publisher

ieee

Conference_Titel

Design Automation Conference (DAC), 2013 50th ACM/EDAC/IEEE

Conference_Location

Austin, TX

ISSN

0738-100X

Type

conf

Filename

6560702