Title :
New ERA: New efficient reliability-aware wear leveling for endurance enhancement of flash storage devices
Author :
Ming-Chang Yang ; Yuan-Hao Chang ; Che-Wei Tsao ; Po-Chun Huang
Author_Institution :
Inst. of Inf. Sci., Taipei, Taiwan
fDate :
May 29 2013-June 7 2013
Abstract :
As the program/erase (P /E) cycles of flash memory keep decreasing, improving the lifetime/endurance of flash memory has become a fundamental issue in the design of flash devices. This work is motivated by the observation that flash blocks endured the same P/E cycles usually have different bit error rates. In contrast to the existing wear-leveling techniques that try to distribute erases to flash blocks as evenly as possible, we propose an efficient reliability-aware wear-leveling scheme to distribute block erases based on the bit error rates of blocks so as to even out the error rate among flash blocks, to maximize the number of good blocks, and thus to ultimately prolong the lifetime of flash storage devices. The experiments were conducted based on representative realistic workloads to evaluate the efficacy of the proposed scheme, for which the results are very encouraging.
Keywords :
durability; error statistics; flash memories; reliability; wear resistance; bit error rates; efficient reliability aware wear leveling; flash memory endurance enhancement; flash storage device design; reliability aware wear leveling scheme; wear leveling technique; Abstracts; Bit error rate; Epitaxial growth; Epitaxial layers; Performance evaluation; Reliability; endurance; flash memory; reliability; wear leveling;
Conference_Titel :
Design Automation Conference (DAC), 2013 50th ACM/EDAC/IEEE
Conference_Location :
Austin, TX