Title :
Synthesis of Amorphous Silicon Films With High Growth Rate by Gas-Jet Electron Beam Plasma Chemical Vapor Deposition Method
Author :
Baranov, Evgeniy A. ; Khmel, Sergey Y. ; Zamchiy, Alexandr O.
Author_Institution :
Kutateladze Inst. of Thermophys., Novosibirsk, Russia
Abstract :
A gas-jet electron beam plasma chemical vapor deposition method for high-rate deposition of thin silicon films is presented. The method is based on the activation of initial gas molecules by electron beam and fast convective transfer of the radicals to a substrate by means of a supersonic free jet.
Keywords :
amorphous semiconductors; electron beam deposition; elemental semiconductors; plasma CVD; semiconductor growth; semiconductor thin films; silicon; Si; amorphous silicon films; fast convective transfer; gas-jet electron beam plasma chemical vapor deposition method; high growth rate; high-rate deposition; initial gas molecules; radicals; supersonic free jet; thin silicon films; Argon; Chemical vapor deposition; Electron beams; Photovoltaic cells; Plasmas; Silicon; Substrates; Electron beams; plasma chemistry; plasma materials processing; thin films;
Journal_Title :
Plasma Science, IEEE Transactions on
DOI :
10.1109/TPS.2014.2352392
