A low noise 1.5GHz VCO with a 3.75% tuning range using coupled FBAR´s

Author

Nagaraju, Manohar B. ; Sankaragomathi, Kannan A. ; Gilbert, Stephen R. ; Otis, Brian P. ; Ruby, Richard C.

Author_Institution

Dept. of Electr. Eng., Univ. of Washington, Seattle, WA, USA

fYear

2012

fDate

7-10 Oct. 2012

Firstpage

2202

Lastpage

2205

Abstract

We present the first IC oscillator using acoustically coupled FBAR´s with a 3.75% tuning range. The tuning range is higher than previous low-power FBAR oscillators and wide enough to cover the individual ISM bands. The high Q of the resonator enables to achieve a phase noise of -144.35dBc/Hz at 1MHz offset with a carrier frequency of 1.55GHz and a power consumption of 11.7mW. The miniaturized coupled FBAR die is (500×540)μm². The active area of the CMOS is (600x550)μm².

Keywords

CMOS integrated circuits; UHF integrated circuits; UHF oscillators; acoustic resonators; bulk acoustic wave devices; circuit tuning; low-power electronics; phase noise; voltage-controlled oscillators; CMOS process; VCO; acoustically coupled FBAR; frequency 1.5 GHz; frequency 1.55 GHz; low-power FBAR oscillators; phase noise; power 11.7 mW; tuning range; voltage-controlled oscillators; CMOS integrated circuits; Film bulk acoustic resonators; Impedance; Phase noise; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium (IUS), 2012 IEEE International

Conference_Location

Dresden

ISSN

1948-5719

Print_ISBN

978-1-4673-4561-3

Type

conf

DOI

10.1109/ULTSYM.2012.0550

Filename

6561900