Novel thin-film piezoelectric aluminum nitride rate gyroscope

Author

Goericke, Fabian T. ; Vigevani, Gabriele ; Izyumin, I.I. ; Boser, Bernhard E. ; Pisano, Albert P.

Author_Institution

Berkeley Sensor & Actuator Center, Univ. of California, Berkeley, Berkeley, CA, USA

fYear

2012

fDate

7-10 Oct. 2012

Firstpage

1067

Lastpage

1070

Abstract

A new type of gyroscope that utilizes piezoelectric, thin-film, sputter-deposited aluminum nitride (AlN) as both structural and active material is demonstrated. Advantages of this approach are the capability to integrate several types of sensors and RF resonators on one chip in a post-CMOS compatible fabrication process and the potential of an all-AlN device to operate at high temperatures. A method to drive and sense specific resonance mode shapes by patterning the top electrode is explained and electrical and rate sensing performance characteristics of the device are stated.

Keywords

CMOS integrated circuits; III-V semiconductors; aluminium compounds; gyroscopes; microelectrodes; microfabrication; microsensors; piezoelectric transducers; sputter deposition; thin film sensors; AlN; RF resonators; active material; electrical sensing performance characteristics; post-CMOS compatible fabrication process; rate sensing performance characteristics; sensors; sputter-deposited aluminum nitride; structural material; thin-film piezoelectric aluminum nitride rate gyroscope; top electrode patterning; Aluminum nitride; Capacitance; Electrodes; Gyroscopes; III-V semiconductor materials; Resonant frequency; Temperature sensors; Aluminum nitride; MEMS gyroscope; harsh environment; piezoelectric inertial sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium (IUS), 2012 IEEE International

Conference_Location

Dresden

ISSN

1948-5719

Print_ISBN

978-1-4673-4561-3

Type

conf

DOI

10.1109/ULTSYM.2012.0267

Filename

6561935