Wafer bonding of polycrystalline spinel with LiNbO3/LiTaO3 for temperature compensation of RF surface acoustic wave devices

Author

Geshi, K. ; Teraoka, K. ; Kinoshita, Shosuke ; Nakayama, Makoto ; Imagawa, Y. ; Nakayama, Shoji ; Hashimoto, Koji ; Tanaka, Shoji ; Totsu, Kentaro ; Takagi, Hiroyuki

Author_Institution

Osaka Works, Sumitomo Electr. Ind., Ltd., Osaka, Japan

fYear

2012

fDate

7-10 Oct. 2012

Firstpage

2726

Lastpage

2729

Abstract

This paper proposes use of polycrystalline spinel for the temperature compensation of RF surface acoustic wave (SAW) devices. Spinel can be bonded with LiTaO₃ (LT) and LiNbO₃ (LN) wafers by using adhesive and direct bonding techniques. A series of RF SAW resonators were fabricated on the LT(LN)/spinel structure, and their performance including the temperature coefficient of frequency (TCF) was measured. For comparison, SAW resonators employing Si, sapphire and alumina in place of spinel were also fabricated. The result indicated that the polycrystalline spinel offers TCF improvement better than the other materials.

Keywords

adhesive bonding; compensation; piezoelectric materials; polymers; surface acoustic wave resonators; wafer bonding; LN; LT; LiNbO₃; LiTaO₃; RF SAW resonators; RF surface acoustic wave devices; SAW devices; TCF; adhesive bonding techniques; direct bonding techniques; polycrystalline spinel; spinel structure; temperature coefficient of frequency; temperature compensation; wafer bonding; Bonding; Plasma temperature; Radio frequency; Substrates; Surface acoustic waves; Wafer bonding; SAW resonator; spinel; temperature coefficient of frequency; temperature compensation; wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium (IUS), 2012 IEEE International

Conference_Location

Dresden

ISSN

1948-5719

Print_ISBN

978-1-4673-4561-3

Type

conf

DOI

10.1109/ULTSYM.2012.0683

Filename

6561988