Suppression Technique of fast-shear-wave spurious responses in SAW resonators on SiO2/Al/LiNbO3 structure

Author

Fujiwara, J. ; Goto, R. ; Nakamura, Hajime ; Tsurunari, T. ; Nakanishi, Hayao ; Hamaoka, Y.

Author_Institution

Ind. Devices Co., Panasonic Corp., Kadoma, Japan

fYear

2012

fDate

7-10 Oct. 2012

Firstpage

799

Lastpage

802

Abstract

SH mode on SiO₂/Al/LiNbO₃ structure is studied because of their sufficient electromechanical coupling factor (K²) and good temperature coefficient of frequency (TCF). Authors proposed the suppression method of the spurious response of the Rayleigh mode and the transverse mode for the narrow duplex gap application. For the narrow duplex gap application, SiO₂ thickness must be increased to achieve the good TCF characteristics. However, another spurious response is appeared near the fast-shear-wave as increasing the SiO₂ thickness. This paper discusses the suppression mechanism of the spurious response near the fast-shear-wave.

Keywords

aluminium; elastic waves; lithium compounds; silicon compounds; surface acoustic wave resonators; surface acoustic waves; Rayleigh mode; SAW resonators; SiO₂-Al-LiNbO₃; TCF; electromechanical coupling factor; fast-shear-wave spurious response; narrow duplex gap; surface acoustic wave resonators; temperature coefficient of frequency; transverse mode; Couplings; Films; Lithium niobate; Substrates; Surface acoustic waves; Temperature; SAW resonator; SiO2/Al/LiNbO3 structure; Spurious response; tempature coefficient;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium (IUS), 2012 IEEE International

Conference_Location

Dresden

ISSN

1948-5719

Print_ISBN

978-1-4673-4561-3

Type

conf

DOI

10.1109/ULTSYM.2012.0199

Filename

6562024