Title :
Advances in III–V semiconductor photonics: Nanostructures and integrated chips
Author_Institution :
Center for Collaborative Res. & Technol. Dev. (CREATE), Kobe Univ., Kobe, Japan
Abstract :
This paper reviews the progress of III-V semiconductor technology for the application to photonic telecommunications and signal processing systems by focusing nanostructure materials and devices as well as monolithic/hybrid integration technologies for improving performance and functions. Also the role of combined use of nanostructure devices and integration technology is discussed for the development of future energy efficient photonic systems.
Keywords :
III-V semiconductors; integrated optoelectronics; nanoelectronics; nanophotonics; nanostructured materials; reviews; III-V semiconductor photonics; III-V semiconductor technology; energy efficient photonic systems; hybrid integration; integrated chips; monolithic integration; nanostructure devices; nanostructure materials; photonic telecommunications; signal processing; Materials; Nanostructures; Optical switches; Photonics; Quantum dot lasers; Vertical cavity surface emitting lasers; III–V semiconductors; Si-photonics; all-optical switches; nanostructures; optoelectronic integrated circuits (OEICs); photonic devices; photonic integrated ciruits (PICs); quantum dots;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562561
