Title :
Self-aligned quantum-dot growth for single-photon sources
Author :
Pohl, U.W. ; Strittmatter, A. ; Schulze, J.-H. ; Quandt, D. ; Germann, T.D. ; Unrau, W. ; Heindel, T. ; Hitzemann, O. ; Bimberg, Dieter ; Reitzenstein, S.
Author_Institution :
Inst. fzr Festkorperphys., Tech. Univ. Berlin, Berlin, Germany
Abstract :
The buried oxide current-aperture in a pin diode-structure is used to create a strain field for the self-aligned nucleation of site-controlled single quantum dots. A single-photon source fabricated applying this approach shows spectrally very narrow emission lines (FWHM ≤ 25 μeV) and spectrally pure single-photon emission with a second-order autocorrelation g(2)(0) = 0.05.
Keywords :
nucleation; optical fabrication; p-i-n photodiodes; photoemission; semiconductor growth; semiconductor quantum dots; spectral line narrowing; FWHM; buried oxide current-aperture; pin diode-structure; second-order autocorrelation; self-aligned nucleation; self-aligned quantum-dot growth; single-photon sources; site-controlled single quantum dots; spectrally pure single-photon emission; spectrally very narrow emission lines; strain field; Conferences; Indium phosphide; Site-controlled quantum dots; single-photon sources;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562566
