Selective area MOVPE of InGaAsP and InGaN systems as process analytical and design tools for OEICs

Author

Shimogaki, Y. ; Sugiyama, Masakazu ; Nakano, Yoshiaki

Author_Institution

Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

Numerical simulation on growth rate non-uniformity of selective area growth (SAG) in metal-organic vapor phase epitaxy (MOVPE) is an effective method to examine the surface reaction kinetics, which is normally hindered by mass transport rate of precursors. SAG is also an effective tool to fabricate opto-electronic integrated circuits (OEICs) to reduce the process steps. In the present talk, the kinetic analyses on InGaAsP and InGaN MOVPE processes using SAG will be presented.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated circuit design; integrated optoelectronics; reaction kinetics; surface chemistry; vapour phase epitaxial growth; wide band gap semiconductors; InGaAsP; InGaAsP systems; InGaN; InGaN systems; MOVPE; OEIC; SAG; growth rate nonuniformity; metal organic vapor phase epitaxy; optoelectronic integrated circuits; selective area growth; surface reaction kinetics; Epitaxial growth; Epitaxial layers; Gallium arsenide; Kinetic theory; Numerical analysis; Surface treatment; InGaAsP; InGaN; OEICs; Selective Area Growth;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562576

Filename

6562576