Zn diffusion in Ruthenium doped InP with annealing by Metalorganic Vapor Phase Epitaxy

Author

Yamaguchi, Hitoshi ; Nagira, T. ; Kawazu, Zempei ; Ono, Keishi ; Takemi, Masayoshi

Author_Institution

High Freq. & Opt. Device Works, Mitsubishi Electr. Corp., Itami, Japan

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

Ruthenium (Ru) as the semi-insulated doping material for InP has good characteristics in terms of the capacitance and heat dissipation of the current blocking layer for Laser Diodes. However unintentional Zn diffusion from adjacent p-InP into Ru-InP causes the degradation of Laser characteristics such as the output power. In this paper, we fabricated p-InP/Ru-InP/pInP (p/Ru/p-InP) structure by Metalorganic Vapor Phase Epitaxy (MOVPE) and analyzed the behavior of Zn diffusion from Zn-InP into Ru-InP after annealing by SIMS measurement.

Keywords

III-V semiconductors; MOCVD; annealing; diffusion; indium compounds; ruthenium; secondary ion mass spectra; vapour phase epitaxial growth; zinc; InP:Ru; MOVPE; SIMS measurement; Zn; annealing; diffusion; laser diodes; metalorganic vapor phase epitaxy; p-InP/Ru-InP/p-InP structure; semiinsulated doping material; Annealing; Epitaxial growth; Epitaxial layers; Fiber lasers; Indium phosphide; Zinc; InP; MOVPE; Ruthenium; Zn; diffusion;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562581

Filename

6562581