• DocumentCode
    621013
  • Title

    The measurement of dislocation on InP wafers

  • Author

    Qingfang Huang ; Zhiguo Liu ; Ruixia Yang ; Xiaolan Li ; Qiang Wang ; Xiuwei Tian ; Jianye Yang ; Shuai Li

  • Author_Institution
    Sci. & Technol. on ASIC Lab., Hebei Semicond. Res. Inst., Shijiazhuang, China
  • fYear
    2013
  • fDate
    19-23 May 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We studied the effect of HCl, H3PO4, HBr etchants, temperature, illumination on the display of dislocation pits on <;100> InP single crystal wafers, and analyzed the effect of illumination, using the wet chemical etching method. The experimental results show that the etching rate is strongly dependent on the proportion of HBr in the mixed etchant and HBr alone can reveal dislocation pits on <;100> InP wafers. Both illumination and higher temperature can increase the etching rate. We also discuss the mechanism of different sizes of dislocation pits.
  • Keywords
    III-V semiconductors; etching; indium compounds; InP; dislocation pits; single crystal wafers; wet chemical etching; Chemicals; Crystals; Etching; Fuel processing industries; Indium phosphide; Lighting; Substrates; InP; dislocation; wet chemical etching method;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
  • Conference_Location
    Kobe
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4673-6130-9
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2013.6562582
  • Filename
    6562582
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=621013