Title :
Analysis of photoluminescent properties of InAs/InGaAsP/InP quantum dots structure
Author :
Sato, Ryota ; Nakamura, Mitsutoshi ; Imai, H.
Author_Institution :
Fac. of Sci., Japan Women´s Univ., Tokyo, Japan
Abstract :
We measured photoluminescence (PL) spectra of InAs/InGaAsP/InP quantum dots structures. We examined the PL peak shift changing the polarization of excitation light from p-polarization to s-polarization and the excitation light power. From the results, we estimated that the phonon emission according to the increase in TM component of the p-polarization.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; phonons; photoluminescence; semiconductor quantum dots; InAs-InGaAsP-InP; PL peak shift; TM component; excitation light power; p-polarization; phonon emission; photoluminescent properties; quantum dots structure; s-polarization; Charge carrier density; Filling; Indium phosphide; Phonons; Quantum dot lasers; Quantum dots; InAs/InGaAsP/InP quantum dots structure; Photoluminescence;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562586
