Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): Effect of QD size, indium composition and nitrogen incorporation

Author

Robert, C. ; Cornet, C. ; Pereira da Silva, K. ; Turban, Peter ; Mauger, S. ; Nguyen Thanh, T. ; Even, J. ; Jancu, J.M. ; Perrin, M. ; Folliot, Herve ; Rohel, T. ; Tricot, S. ; Balocchi, A. ; Barate, P. ; Marie, X. ; Koenraad, P.M. ; Alonso, M.I. ; Goi, A

Author_Institution

INSA, Univ. Eur. de Bretagne, Rennes, France

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

The structural properties of (In,Ga)As/GaP quantum dots (QDs) are studied by plane view and cross scanning tunneling microscopy. Time-resolved and pressure dependent photoluminescence experiments show a ground optical transition of indirect type. Mixed k.p/tight-binding simulations indicate a possible indirect to direct crossover depending on indium content and QD size. The incorporation of nitrogen in QDs is finally shown.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; photoluminescence; scanning tunnelling microscopy; semiconductor quantum dots; tight-binding calculations; time resolved spectra; wide band gap semiconductors; (InGa)As(N)-GaP; cross scanning tunneling microscopy; ground optical transition; indium composition; mixed k.p-tight-binding simulations; nitrogen incorporation; pressure dependent photoluminescence; quantum dots; structural properties; time-resolved photoluminescence; Atom optics; Indium; Nitrogen; Optical imaging; Photoluminescence; Quantum dots; Silicon; pressure dependent photoluminescence; quantum dots; scanning tunneling microscopy; time-resolved photoluminescence;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562587

Filename

6562587