Optimizing the double-cap procedure for InAs/InGaAsP/InP quantum dots by metal-organic chemical vapor deposition

Author

Shuai Luo ; Hai-Ming Ji ; Xiao-Guang Yang ; Tao Yang

Author_Institution

Key Lab. of Semicond. Mater. Sci., Beijing, China

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

We report the optimization of the double-cap (DC) procedure for InAs/InGaAsP/InP quantum dots (QD) grown by metal-organic chemical vapor deposition. By using a combination of optimized thickness of the first cap layer and elevated growth temperature for the second cap layer, the photoluminescence (PL) linewidth of samples with five QD layers is significantly reduced from 124 meV to 87 meV at room temperature. Furthermore, the uniformity of the PL peak intensity and peak energy on the wafer surface is evidently improved. This distribution improvement is especially beneficial for improving device yield per wafer in device fabrication.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; InAs-InGaAsP-InP; double-cap procedure; metal-organic chemical vapor deposition; optimization; photoluminescence linewidth; quantum dots; temperature 293 K to 298 K; wafer surface; Chemical vapor deposition; Indium phosphide; Quantum dot lasers; Quantum dots; Substrates; Temperature; Temperature measurement; InAs; InP; metal-organic chemical vapor deposition; quantum dot;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562588

Filename

6562588