1540 to 1645 nm continuous VCSEL emission based on quantum dashes

Author

Paranthoen, C. ; Levallois, C. ; Gauthier, J. ; Taleb, Fadia ; Chevalier, N. ; Perrin, M. ; Leger, Y. ; De Sagazan, Olivier ; Le Corre, A.

Author_Institution

INSA, Univ. Eur. de Bretagne, Rennes, France

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

We report on an optically excited InAs quantum dash vertical cavity surface emitting lasers (VCSEL) on InP substrate. By introducing a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling us to monitor the gain material bandwidth. In this paper we show a continuously variable VCSEL emission from 1645 down to 1540 nm all across the wafer, a consequence of the important and wide gain afforded by the use of optimized quantum dashes.

Keywords

III-V semiconductors; indium compounds; laser cavity resonators; microcavity lasers; quantum dash lasers; surface emitting lasers; InAs; InP; InP substrate; continuously variable VCSEL emission; gain material bandwidth; optically excited quantum dash vertical cavity surface emitting lasers; optimized quantum dashes; resonant wavelength; spatial dependence; wafer; wavelength 1540 nm to 1645 nm; wedge microcavity design; Indium phosphide; Laser tuning; Quantum dots; Substrates; Vertical cavity surface emitting lasers; Wavelength measurement; VCSEL; quantum dashes; wide gain;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562594

Filename

6562594