Title :
Analysis of uni-traveling-carrier photodetectors (UTC-PDs) with dipole-doped interface
Author :
Meng, Q.Q. ; Liu, Charles Y. ; Wang, Huifang ; Ang, K.S. ; Manoj, K. ; Guo, T.X. ; Gao, Bingzhao
Author_Institution :
Temasek Labs. (TL@NTU), Nanyang Technol. Univ., Singapore, Singapore
Abstract :
A uni-traveling-carrier photodetector (UTC-PD) with dipole-doped structure at the InGaAs/InP interface has been designed, fabricated and characterized. The device transit time delay and RC time delay was extracted using an equivalent circuit model. A transit time delay time less than 4.5 ps was obtained with a junction reverse bias lager than 4 V. The results suggest that the current-blocking at InGaAs/InP interface can be effectively suppressed by the dipole-doped interface.
Keywords :
III-V semiconductors; delays; equivalent circuits; gallium arsenide; indium compounds; photodetectors; InGaAs-InP; RC time delay; device transit time delay; dipole-doped interface; equivalent circuit model; junction reverse bias; uni traveling carrier photodetector; Bandwidth; Delay effects; Indium gallium arsenide; Indium phosphide; Integrated circuit modeling; Photodiodes; dipole doping; equivalent circuit model; time delay; uni-traveling-carrier photodetector;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562596
