Analysis of uni-traveling-carrier photodetectors (UTC-PDs) with dipole-doped interface

Author

Meng, Q.Q. ; Liu, Charles Y. ; Wang, Huifang ; Ang, K.S. ; Manoj, K. ; Guo, T.X. ; Gao, Bingzhao

Author_Institution

Temasek Labs. (TL@NTU), Nanyang Technol. Univ., Singapore, Singapore

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

A uni-traveling-carrier photodetector (UTC-PD) with dipole-doped structure at the InGaAs/InP interface has been designed, fabricated and characterized. The device transit time delay and RC time delay was extracted using an equivalent circuit model. A transit time delay time less than 4.5 ps was obtained with a junction reverse bias lager than 4 V. The results suggest that the current-blocking at InGaAs/InP interface can be effectively suppressed by the dipole-doped interface.

Keywords

III-V semiconductors; delays; equivalent circuits; gallium arsenide; indium compounds; photodetectors; InGaAs-InP; RC time delay; device transit time delay; dipole-doped interface; equivalent circuit model; junction reverse bias; uni traveling carrier photodetector; Bandwidth; Delay effects; Indium gallium arsenide; Indium phosphide; Integrated circuit modeling; Photodiodes; dipole doping; equivalent circuit model; time delay; uni-traveling-carrier photodetector;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562596

Filename

6562596