Multi-regrowth steps for the realization of buried single ridge and μ-stripes quantum cascade lasers

Author

Parillaud, O. ; De Naurois, G.-M. ; Simozrag, B. ; Trinite, V. ; Maisons, G. ; Garcia, M.A. ; Gerard, B. ; Carras, M. ; Metaferia, Wondwosen ; Junesand, Carl ; Kataria, Himanshu ; Sun, Yue ; Lourdudoss, Sebastian

Author_Institution

III-V Lab., Palaiseau, France

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

We report on the realization of buried single ridge and μ-stripes quantum cascade lasers using HVPE and MOVPE regrowth steps of semi-insulating InP:Fe and Si doped layers. We present here the preliminary results obtained on these devices. The reduction of the thermal resistance achieved using semiinsulating InP:Fe for regrowth planarization and μ-stripe arrays approaches are shown and performance perspectives are addressed.

Keywords

III-V semiconductors; MOCVD; indium compounds; iron; planarisation; quantum cascade lasers; semiconductor epitaxial layers; semiconductor growth; semiconductor laser arrays; silicon; thermal resistance; vapour phase epitaxial growth; μ-stripe arrays; μ-stripe quantum cascade lasers; HVPE regrowth; InP:Fe; InP:Si; MOVPE regrowth; buried single ridge quantum cascade lasers; regrowth planarization; semiinsulating doped layers; thermal resistance; Epitaxial layers; Geometry; Molecular beam epitaxial growth; Planarization; Quantum cascade lasers; Waveguide lasers; μ-stripes arrays; MOVPE and HVPE; Quantum Cascade Lasers; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562597

Filename

6562597