DocumentCode :
621028
Title :
Mid-infrared photodetectors with InAs/GaSb type-II quantum wells grown on InP substrate
Author :
Inada, H. ; Miura, Kiyotaka ; Iguchi, Yoshinori ; Kawamura, Yuriko ; Murooka, Jumpei ; Katayama, Hiromi ; Kanno, Shota ; Takekawa, T. ; Kimata, M.
Author_Institution :
Transm. Devices R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan
fYear :
2013
fDate :
19-23 May 2013
Firstpage :
1
Lastpage :
2
Abstract :
Infrared photodetectors with InAs/GaSb type-II quantum wells on InP substrate was fabricated and evaluated. Dark current density was 0.1mA/cm2 at 112K. Quantum efficiency at 5μm was 10%. This results show that InAs/GaSb quantum wells on InP substrate has potential for infrared image sensor.
Keywords :
III-V semiconductors; current density; gallium compounds; indium compounds; infrared detectors; optical fabrication; photodetectors; semiconductor quantum wells; InAs-GaSb; InP; InP substrate; dark current density; infrared image sensor; midinfrared photodetectors; quantum efficiency; temperature 112 K; type-II quantum wells; wavelength 5 mum; Dark current; Gallium arsenide; Gases; Indium phosphide; Photodetectors; Substrates; Temperature; InAs/GaSb; InP; Infrared; Photodetector; type-II;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
ISSN :
1092-8669
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2013.6562598
Filename :
6562598
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=621028
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