• DocumentCode
    621028
  • Title

    Mid-infrared photodetectors with InAs/GaSb type-II quantum wells grown on InP substrate

  • Author

    Inada, H. ; Miura, Kiyotaka ; Iguchi, Yoshinori ; Kawamura, Yuriko ; Murooka, Jumpei ; Katayama, Hiromi ; Kanno, Shota ; Takekawa, T. ; Kimata, M.

  • Author_Institution
    Transm. Devices R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan
  • fYear
    2013
  • fDate
    19-23 May 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Infrared photodetectors with InAs/GaSb type-II quantum wells on InP substrate was fabricated and evaluated. Dark current density was 0.1mA/cm2 at 112K. Quantum efficiency at 5μm was 10%. This results show that InAs/GaSb quantum wells on InP substrate has potential for infrared image sensor.
  • Keywords
    III-V semiconductors; current density; gallium compounds; indium compounds; infrared detectors; optical fabrication; photodetectors; semiconductor quantum wells; InAs-GaSb; InP; InP substrate; dark current density; infrared image sensor; midinfrared photodetectors; quantum efficiency; temperature 112 K; type-II quantum wells; wavelength 5 mum; Dark current; Gallium arsenide; Gases; Indium phosphide; Photodetectors; Substrates; Temperature; InAs/GaSb; InP; Infrared; Photodetector; type-II;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
  • Conference_Location
    Kobe
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4673-6130-9
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2013.6562598
  • Filename
    6562598
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=621028