DocumentCode :
621029
Title :
Cryogenic DC characterization of InAs/Al80Ga20Sb self-switching diodes
Author :
Westlund, A. ; Moschetti, Giuseppe ; Nilsson, Per-Ake ; Grahn, Jan ; Desplanque, Ludovic ; Wallart, Xavier
Author_Institution :
Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Goteborg, Sweden
fYear :
2013
fDate :
19-23 May 2013
Firstpage :
1
Lastpage :
2
Abstract :
DC characterization of an InAs/Al80Ga20Sb self-switching diode for THz detection is presented at 300 K and 6 K. Compared to 300 K, an enhancement of the diode I-V nonlinearity and associated responsivity was observed under zerobias conditions at 6 K. The intrinsic responsivity was estimated to 490 V/W at 300 K and 4400 V/W at 6 K.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; submillimetre wave diodes; terahertz wave detectors; InAs-Al80Ga20Sb; THz detection; associated responsivity; cryogenic DC characterization; diode I-V nonlinearity; self-switching diodes; zerobias conditions; Cooling; Detectors; Electrical resistance measurement; HEMTs; MODFETs; Radio frequency; Resistance; InAs; SSD; THz; detector; diode; self-switching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
ISSN :
1092-8669
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2013.6562599
Filename :
6562599
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=621029
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