Title :
Terahertz oscillators using resonant tunneling diodes with InAlGaAs/InP composite collector
Author :
Sogabe, R. ; Shizuno, K. ; Kanaya, Haruichi ; Suzuki, Satoshi ; Asada, Minoru ; Sugiyama, H. ; Yokoyama, Haruki
Author_Institution :
Grad. Sch. of Interdiscipl. Sci. & Eng., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
We proposed a resonant tunneling diode (RTD) with InAlGaAs/InP composite collector for reduction in transit delay caused by the gamma to L valley transition at the collector depletion region. Terahertz oscillators fabricated with this RTD show room-temperature fundamental oscillations of 680-770 GHz with the RTD areas of 1-1.5 square microns. Higher frequency will be possible by reducing the RTD area.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; resonant tunnelling diodes; submillimetre wave oscillators; wide band gap semiconductors; InAlGaAs-InP; RTD areas; collector depletion region; composite collector; frequency 680 GHz to 770 GHz; resonant tunneling diode; temperature 293 K to 298 K; terahertz oscillators; transit delay reduction; Capacitance; Delays; Frequency measurement; Indium phosphide; Oscillators; Resonant frequency; Resonant tunneling devices; InAlGaAs/InP composite collector; resonant tunneling diode; slot antenna; terahertz oscillator;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562603
