120nm AlSb/InAs HEMT without gate recess: 290GHz fT and 335GHz fmax

Author

Gardes, C. ; Bagumako, S.M. ; Desplanque, Ludovic ; Wichmann, Nicolas ; Bollaert, S. ; Danneville, Frangois ; Wallart, Xavier ; Roelens, Yannick

Author_Institution

Inst. d´Electron. de Microelectron. et de Nanotechnol. (IEMN), Univ. Lille I, Villeneuve d´Ascq, France

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

In this paper, we report on high frequency performances of AlSb/InAs high electron mobility transistor (HEMT) with 120nm gate length at room temperature. The excellent combined cut-off frequencies fT/f_max of 290/335 GHz simultaneously obtained at drain bias of 0.36V is another demonstration of the ability of AlSb/InAs HEMT for high frequency operation with low-power consumption. Small-signal equivalent circuit parameters have been extracted.

Keywords

III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; submillimetre wave transistors; AlSb-InAs; HEMT; frequency 290 GHz; frequency 335 GHz; high electron mobility transistor; high frequency operation; high frequency performance; low power consumption; size 120 nm; voltage 0.36 V; Current measurement; Cutoff frequency; Electrical resistance measurement; Equivalent circuits; Gallium arsenide; HEMTs; Logic gates; AlSb/InAs HEMT; antimonide-based compound semiconductor; high frequency performances;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562604

Filename

6562604