DocumentCode
621037
Title
Simulation and fabrication of InGaAs planar Gunn diode on InP substrate
Author
Papageorgiou, V. ; Khalid, Amir ; Chong Li ; Cumming, David R. S.
Author_Institution
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
fYear
2013
fDate
19-23 May 2013
Firstpage
1
Lastpage
2
Abstract
This paper describes the simulation and fabrication of the first planar Gunn diode based on InGaAs on InP substrate. Gunn devices were simulated using the Sentaurus Device software. The fabricated planar Gunn diodes are 1.3 μm long and 120 micron wide and the measured and simulated results are in excellent agreement.
Keywords
Gunn diodes; III-V semiconductors; gallium arsenide; indium compounds; millimetre wave diodes; InGaAs; InP; Sentaurus device software; millimetre-wave planar Gunn diodes; size 1.3 mum; Current measurement; Fabrication; Indium phosphide; Mathematical model; Semiconductor device measurement; Semiconductor device modeling; Substrates; Gunn diode; mm-wave devices; simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location
Kobe
ISSN
1092-8669
Print_ISBN
978-1-4673-6130-9
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2013.6562607
Filename
6562607
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