Title :
High growth rate Gallium Phosphide for red LEDs
Author :
Farrell, Stephanie ; Ebert, C. ; Dyer, David
Author_Institution :
Veeco Instrum., Inc., Somerset, NJ, USA
Abstract :
Growth rates of up to 17 microns per hour for Gallium Phosphide grown by MOCVD are achieved and material doping properties are analyzed.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; light emitting diodes; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; GaP; MOCVD; high growth rate gallium phosphide; light emitting diode; material doping properties; metalorganic chemical vapour deposition; red LED; Carbon; Doping; Gallium arsenide; Light emitting diodes; MOCVD; Performance evaluation; Quantum well devices; MOCVD; gallium; light-emitting diode; phospide;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562611
