Title :
Static and dynamic characteristics of InAs/AlGaInAs/InP quantum dot lasers operating at 1550 nm
Author :
Reithmaier, J.P. ; Ivanov, V. ; Sichkovskyi, V. ; Gilfert, Christian ; Rippien, A. ; Schnabel, F. ; Gready, D. ; Eisenstein, Gadi
Author_Institution :
Inst. of Nanostruct. Technol. & Analytics (INA), Univ. of Kassel, Kassel, Germany
Abstract :
With high modal gain InAs/AlGaInAs/InP quantum dot laser material short cavity ridge waveguide lasers were fabricated with cavity lengths down to 275 μm. These devices show new record values in direct digital signal modulation at 22 GBit/s. In addition also strong improvement are expected from this laser material in the static properties, in particular on the linewidth due to the suppression of the linewidth enhancement factor. First distributed feedback lasers on similar quantum dot laser material were processed and preliminary linewidth measurements indicate a significant linewidth reduction. Quantitative investigations are under way and will be presented at the conference.
Keywords :
aluminium compounds; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; laser transitions; optical modulation; quantum dot lasers; ridge waveguides; spectral line breadth; waveguide lasers; InAs-AlGaInAs-InP; direct digital signal modulation; distributed feedback lasers; dynamic characteristics; linewidth enhancement factor; quantum dot laser material; quantum dot lasers; short cavity ridge waveguide lasers; static characteristics; wavelength 1550 nm; Distributed feedback devices; Laser feedback; Laser modes; Measurement by laser beam; Quantum dot lasers; Waveguide lasers; distributed feedback laser; high frequency modulation; narrow linewidth; optical communication; quantum dot laser;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562615
