Title :
1480nm InGaAsP LOC broad-area-lasers with >18W pulsed output power at 20°C
Author :
Fendler, D. ; Mohrle, M. ; Spiegelberg, M. ; Rehbein, W. ; Passenberg, Wolfgang ; Grote, N.
Author_Institution :
Heinrich-Hertz-Inst. Berlin, Fraunhofer Inst. for Telecommun., Berlin, Germany
Abstract :
1480nm InGaAsP large optical cavity broad-area laser diodes were developed and optimized for pulsed operation showing optical output power of >18W at 20°C. Furthermore the μs pulse duration regime was investigated with respect to power saturation and self-heating at elevated operating currents.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; optical pulse generation; optical saturation; semiconductor lasers; InGaAsP; LOC broad-area-lasers; elevated operating currents; large optical cavity broad-area laser diodes; optical output power; power saturation; pulsed operation; self-heating; temperature 20 degC; wavelength 1480 nm; Diode lasers; Optical device fabrication; Optical fibers; Optical pulses; Optical saturation; Power generation; InGaAsP; NIR; high power; semiconductor laser;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562617
