Butt-joint built-in (BJB) structure for membrane photonic integration

On-chip optical interconnections have potential for replace global copper wires on LSI chips. I n this work, as an integration method, an OMVPE butt-joint regrowth of 175-nm thick GaInAsP/InP was conducted toward an integration of active and passive components. In the numerical calculation, a coupling efficiency and residual reflection of designed butt-joint coupling were estimated to be 98% and -40 dB, respectively. In the experimental method, we investigated the dependence of butt-joint interface morphology and regrown surface flatness on the side etch depth and the mesa angle. As a result, a flat regrown surface without degradation in crystalline quality was obtained.