Intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrate by SiO2 sputtering and annealing technique

Author

Matsushita, Akira ; Matsumoto, Akiyoshi ; Akahane, Kouichi ; Matsushima, Y. ; Utaka, K.

Author_Institution

Fac. of Sci. & Eng., Waseda Univ., Tokyo, Japan

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

We have studied the intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrates by SiO₂ sputtering and annealing technique with a low temperature of 650 □ to find a large PL spectral blue-shift by about 60 nm. This result suggests that the low temperature intermixing technique is promising for easy formation of monolithic integrated circuits with the highly-stacked QD structures.

Keywords

III-V semiconductors; aluminium compounds; annealing; gallium arsenide; indium compounds; mixing; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; spectral line shift; sputter deposition; InAs-InGaAlAs; InP; InP (311)B substrate; MBE; annealing; highly-stacked quantum dot structures; low temperature intermixing; molecular beam epitaxial growth; monolithic integrated circuits; photoluminescence spectral blue-shift; sputtering; temperature 650 degC; Annealing; Films; Indium phosphide; Photonics; Sputtering; Substrates; InAs/InGaAlAs; PL wavelength; intermixing; quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562629

Filename

6562629