Title :
High transconductance surface channel In0.53Ga0.47As MOSFETs using MBE source-drain regrowth and surface digital etching
Author :
Sanghoon Lee ; Cheng-Ying Huang ; Carter, A.D. ; Law, Jeremy J. M. ; Elias, D.C. ; Chobpattana, Varistha ; Thibeault, Brian J. ; Mitchell, W. ; Stemmer, Susanne ; Gossard, Arthur C. ; Rodwell, Mark J. W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
Abstract :
We demonstrate In0.53Ga0.47As surface channel MOSFETs using a gate-last process and MBE source/drain (S/D) regrowth. The structure uses a sacrificial N+ InGaAs channel cap layer between the regrown S/D contact layer and the channel, which is removed in the channel region by a “digital” etch process incorporating UV ozone oxidation and surface stripping in dilute HCl. A device with 65 nm-Lg and 1.2 nm EOT shows 1.6 mS/μm peak transconductance at Vds = 0.5 V and 120 mV/dec SS at Vds = 0.05 V, while 535 nm-Lg devices show 95 mV/dec SS at at Vds = 0.1 V.
Keywords :
III-V semiconductors; MOSFET; etching; gallium arsenide; indium compounds; molecular beam epitaxial growth; ozone; In0.53Ga0.47As; MBE; MOSFET; UV ozone oxidation; channel cap layer; channel region; digital etch process; high transconductance surface channel; size 1.2 nm; size 535 nm; size 65 nm; source-drain regrowth; surface digital etching; surface stripping; voltage 0.05 V; voltage 0.5 V; Current density; Gases; Indium gallium arsenide; Logic gates; MOSFET; Surface treatment; Transconductance; InGaAs MOSFETs; digital etching style; source-drain regrowth; substitutional-gate; surface channel;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562630
