Title :
Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs
Author :
Kim, S.H. ; Yokoyama, Masafumi ; Nakane, Ryosho ; Ichikawa, Osamu ; Osada, Takenori ; Hata, Masaharu ; Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution :
Univ. of Tokyo, Tokyo, Japan
Abstract :
Effects of channel-thickness-fluctuation scattering on electron mobility have been analyzed and it was found that channel-thickness-fluctuation scattering is important parameters decide mobility in ETB III-V-OI MOSFETs. Also, we have clarified that the introduction of MOS interface buffer layer is effective to enhance mobility through the increase of μfluctuation.
Keywords :
III-V semiconductors; MOSFET; electromagnetic wave scattering; electron mobility; gallium arsenide; indium compounds; semiconductor device models; InGaAs; MOS interface; MOSFET; channel thickness fluctuation scattering; electron mobility; Buffer layers; Fluctuations; Logic gates; MOSFET; Scattering; Silicon;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562632
