Impact of Al2O3 ALD temperature on Al2O3/GaSb metal-oxide-semiconductor interface properties

Author

Yokoyama, Masafumi ; Asakura, Yuta ; Yokoyama, Haruki ; Takenaka, Mitsuru ; Takagi, Shinichi

Author_Institution

Dept. of Electr. Eng. & Inf. Syst. (EEIS), Univ. of Tokyo, Tokyo, Japan

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

We have investigated the impact of the Al₂O₃ atomiclayer-deposition (ALD) temperature on Al₂O₃/GaSb metal-oxidesemiconductor (MOS) interface properties. We have found that the GaSb MOS interfaces are severely degraded with increasing the ALD temperature. X-ray photoelectron spectroscopy (XPS) measurements clarified that the main cause of the interface deterioration is the reduction of Sb oxides from GaSb surfaces.

Keywords

III-V semiconductors; MIS structures; MOS capacitors; X-ray photoelectron spectra; alumina; atomic layer deposition; gallium compounds; ALD temperature; Al₂O₃-GaSb; MOS capacitors; MOS interfaces; X-ray photoelectron spectroscopy; XPS analysis; atomiclayer-deposition temperature; interface deterioration; metal-oxide-semiconductor interface properties; Aluminum oxide; Logic gates; MOS capacitors; MOSFET; Surface treatment; Temperature; Temperature measurement; GaSb; MOS; capacitor; interface; oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562633

Filename

6562633