DocumentCode :
621062
Title :
Impact of Al2O3 ALD temperature on Al2O3/GaSb metal-oxide-semiconductor interface properties
Author :
Yokoyama, Masafumi ; Asakura, Yuta ; Yokoyama, Haruki ; Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst. (EEIS), Univ. of Tokyo, Tokyo, Japan
fYear :
2013
fDate :
19-23 May 2013
Firstpage :
1
Lastpage :
2
Abstract :
We have investigated the impact of the Al2O3 atomiclayer-deposition (ALD) temperature on Al2O3/GaSb metal-oxidesemiconductor (MOS) interface properties. We have found that the GaSb MOS interfaces are severely degraded with increasing the ALD temperature. X-ray photoelectron spectroscopy (XPS) measurements clarified that the main cause of the interface deterioration is the reduction of Sb oxides from GaSb surfaces.
Keywords :
III-V semiconductors; MIS structures; MOS capacitors; X-ray photoelectron spectra; alumina; atomic layer deposition; gallium compounds; ALD temperature; Al2O3-GaSb; MOS capacitors; MOS interfaces; X-ray photoelectron spectroscopy; XPS analysis; atomiclayer-deposition temperature; interface deterioration; metal-oxide-semiconductor interface properties; Aluminum oxide; Logic gates; MOS capacitors; MOSFET; Surface treatment; Temperature; Temperature measurement; GaSb; MOS; capacitor; interface; oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
ISSN :
1092-8669
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2013.6562633
Filename :
6562633
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=621062
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