Title :
1/f-noise in vertical InAs nanowire transistors
Author :
Persson, Karl-Magnus ; Berg, Markus ; Lind, Erik ; Wernersson, Lars-Erik
Author_Institution :
Dept. of Electricaland Inf. Technol., Lund Univ., Lund, Sweden
Abstract :
The material quality at high-k interfaces are a major concern for FET devices. We study the effect on two types of InAs nanowire (NW) transistors and compare their characteristics. It is found that by introducing an inner layer of Al2O3 at the high-κ interface, the low frequency noise (LFN) performance regarding gate voltage noise spectral density, SVg, is improved by one order of magnitude per unit gate area.
Keywords :
1/f noise; alumina; field effect transistors; high-k dielectric thin films; indium compounds; nanowires; 1/f-noise; Al2O3; FET devices; InAs; LFN; NW transistors; gate voltage noise spectral density; high-k interfaces; low frequency noise; magnitude per unit gate area; vertical nanowire transistors; Aluminum oxide; Films; Fluctuations; Hafnium compounds; Logic gates; Radio frequency; 1/f-noise; FET; InAs; high-κ; nanowire;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562634
