• DocumentCode
    621063
  • Title

    1/f-noise in vertical InAs nanowire transistors

  • Author

    Persson, Karl-Magnus ; Berg, Markus ; Lind, Erik ; Wernersson, Lars-Erik

  • Author_Institution
    Dept. of Electricaland Inf. Technol., Lund Univ., Lund, Sweden
  • fYear
    2013
  • fDate
    19-23 May 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The material quality at high-k interfaces are a major concern for FET devices. We study the effect on two types of InAs nanowire (NW) transistors and compare their characteristics. It is found that by introducing an inner layer of Al2O3 at the high-κ interface, the low frequency noise (LFN) performance regarding gate voltage noise spectral density, SVg, is improved by one order of magnitude per unit gate area.
  • Keywords
    1/f noise; alumina; field effect transistors; high-k dielectric thin films; indium compounds; nanowires; 1/f-noise; Al2O3; FET devices; InAs; LFN; NW transistors; gate voltage noise spectral density; high-k interfaces; low frequency noise; magnitude per unit gate area; vertical nanowire transistors; Aluminum oxide; Films; Fluctuations; Hafnium compounds; Logic gates; Radio frequency; 1/f-noise; FET; InAs; high-κ; nanowire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
  • Conference_Location
    Kobe
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4673-6130-9
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2013.6562634
  • Filename
    6562634
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=621063