Title :
Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection
Author :
Otsuji, Taiichi ; Watanabe, Toshio ; Boubanga-Tombet, Stephane ; Suemitsu, Tetsuya ; Coquillat, Dominique ; Knap, Wojciech ; Fateev, Denis ; Popov, V.
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
This paper reviews recent advances in ultrafast and ultrahigh sensitive broadband terahertz detection utilizsing asymmetric double-grating-gate InP-based high-electron-mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz under drain-unbiased conditions with a superior low noise equivalent power of 15 pW/√Hz and 6.4 kV/W even at 1.5 THz under drain-biased conditions.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; terahertz wave detectors; InGaAs-InAlAs-InP; asymmetric double-grating-gate; asymmetric dual-grating gate; drain-unbiased condition; frequency 1.5 THz; high-electron-mobility transistor; superior low noise equivalent power; ultrafast sensitive terahertz detection; ultrahigh sensitive terahertz detection; Detectors; HEMTs; Logic gates; MODFETs; Plasma temperature; Plasmons; Temperature measurement; HEMT; detector; grating; plasmon; terahertz;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562639
