Extremely-high sensitive terahertz detector based on dual-grating gate InP-HEMTs

Author

Kurita, Yuichi ; Kobayashi, Kaoru ; Otsuji, Taiichi ; Ducournau, Guillaume ; Meziani, Y.M. ; Popov, V.V. ; Knap, Wojciech

Author_Institution

Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan

fYear

2013

fDate

19-23 May 2013

Firstpage

1

Lastpage

2

Abstract

We report on an extremely-high sensitive terahertz (THz) detector based on our original asymmetric dual-grating gate high electron mobility transistors (A-DGG HEMTs) designed and fabricated using InAlAs/InGaAs/InP material systems. The obtained responsivity is 22.7 kV/W at 200 GHz. To the best of our knowledge, this value is the record responsivity ever reported for this frequency range at room temperature.

Keywords

III-V semiconductors; aluminium compounds; diffraction gratings; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; photodetectors; terahertz materials; terahertz wave detectors; HEMT design; HEMT fabrication; InAlAs-InGaAs-InP; dual grating gate InP HEMT; frequency 200 GHz; high electron mobility transistors; high sensitive terahertz detector; Detectors; HEMTs; Indium phosphide; Logic gates; MODFETs; Plasmons; detection; high electron mobility transistor; terahertz; two-dimensional plasmon;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials (IPRM), 2013 International Conference on

Conference_Location

Kobe

ISSN

1092-8669

Print_ISBN

978-1-4673-6130-9

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2013.6562642

Filename

6562642