Title :
Frequency modulation in mm-wave InGaAs MOSFET/RTD wavelet generators
Author :
Egard, Mikael ; Arlelid, Mats ; Ohlsson, Lars ; Borg, B. Mattias ; Lind, Erik ; Wernersson, Lars-Erik
Author_Institution :
Electr. & Inf. Technol, Lund Univ., Lund, Sweden
Abstract :
Co-integration of an InGaAs MOSFET and an RTD is performed to realize a wavelet generator. The large transconductance of the MOSFET (1.9 mS/μm) is used to switch the current in an oscillator circuit and coherent wavelets down to 41 ps are generated in the frequency domain of 50 to 100 GHz. The lowest power consumption measured is 1.9 pJ/pulse. It is found that the supply bias can be used to modulate the center frequency of the wavelets.
Keywords :
MOSFET; frequency modulation; MOSFET transconductance; center frequency; coherent wavelet; cointegration; frequency domain; frequency modulation; mm-wave MOSFET/RTD wavelet generator; oscillator circuit; power consumption; Frequency modulation; Generators; Indium gallium arsenide; Logic gates; MOSFET; Oscillators; Wavelet transforms; InGaAS MOSFET; RTD; mm-Wave circuits; wavelet generator;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562644
