Title :
250–290 GHz amplifier in 75-nm InP HEMT technology using inverted microstrip transmission line
Author :
Matsumura, Hiroshi ; Shiba, S. ; Sato, Mitsuhisa ; Takahashi, Tatsuro
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
In this paper, we present the development of J-band amplifier in 75-nm InP HEMT technology. The circuit utilizes a six-stage common-source amplifier. An inverted microstrip line (IMSL) structure is employed for matching networks of the amplifier. The developed amplifier realizes a small signal gain of 17.3 dB and a 3-dB band width of 35 GHz from 254 GHz to 289 GHz.
Keywords :
III-V semiconductors; high electron mobility transistors; indium compounds; microstrip lines; millimetre wave amplifiers; transmission line theory; IMSL structure; InP; J-band amplifier; bandwidth 35 GHz; frequency 250 GHz to 290 GHz; gain 17.3 dB; gain 3 dB; inverted microstrip line structure; matching network; six-stage common-source amplifier; size 75 nm; Gain; HEMTs; Indium phosphide; MMICs; Power transmission lines; Substrates; Transmission line measurements; HEMT; J-band; common-source amplifier; inverted microstrip transmission line;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562648
