Title :
InP/InGaAs DHBT technology using SiN/SiO2 sidewall spacers
Author :
Kashio, Norihide ; Kurishima, Kenji ; Ida, Minoru ; Matsuzaki, Hideaki
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
Abstract :
This paper describes 0.25-μm-emitter InP/InGaAs DHBT technology that uses SiN/SiO2 sidewall spacers. The technology enables the fabrication of HBTs with a passivation ledge (0.10-μm width) and narrow base metal (<; 0.25 μm). The fabricated HBT exhibits a high current gain of over 50 and an ft of 491 GHz at a collector current density of 18 mA/μm2.
Keywords :
III-V semiconductors; current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; silicon compounds; DHBT technology; InP-InGaAs; SiN-SiO2; collector current density; current gain; double heterojunction bipolar transistor; emitter; fabricated HBT; fabrication; passivation ledge; sidewall spacer; size 0.25 mum; Current density; Gain; Heterojunction bipolar transistors; Indium phosphide; Metals; Passivation; Silicon compounds; InP DHBT; ledge passivation; sidewall spacer;
Conference_Titel :
Indium Phosphide and Related Materials (IPRM), 2013 International Conference on
Conference_Location :
Kobe
Print_ISBN :
978-1-4673-6130-9
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2013.6562650
