Improved modeling of isolated EDMOS in advanced CMOS technologies

Author

Litty, Antoine ; Ortolland, Sylvie ; Cristoloveanu, S. ; Ros, Helene Beckrich ; Golanski, Dominique

Author_Institution

STMicroelectron., Crolles, France

fYear

2013

fDate

29-31 May 2013

Firstpage

25

Lastpage

28

Abstract

Based on systematic measurements in CMOS 40 nm bulk technology, we propose a new model for isolated Extended-Drain MOS (EDMOS) transistor. Our custom Spice macro-model includes main specific effects in high-voltage devices. In particular, the model accounts for the various parasitic bipolar components (PBCs) that are fully characterized. This model can cover various architectures, from bulk-Si to FDSOI.

Keywords

CMOS integrated circuits; MOSFET; SPICE; integrated circuit modelling; EDMOS transistor; FDSOI; PBC; bulk technology; bulk-Si; custom Spice macro model; high voltage devices; isolated extended drain MOS transistor; parasitic bipolar components; size 40 nm; systematic measurements; CMOS integrated circuits; Integrated circuit modeling; Logic gates; Radio frequency; Semiconductor device modeling; Solid modeling; Substrates; EDMOS; Extended-drain; High-voltage; integrated MOSFET; modeling; parasitic bipolar transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

IC Design & Technology (ICICDT), 2013 International Conference on

Conference_Location

Pavia

Print_ISBN

978-1-4673-4740-2

Electronic_ISBN

978-1-4673-4741-9

Type

conf

DOI

10.1109/ICICDT.2013.6563295

Filename

6563295